

He recalls his experiences as a high school, undergraduate, and graduate student on two continents. In this interview, Baliga discusses his upbringing, education, and employment in industry and the academy.

President Barack Obama conferred on him the National Medal of Technology and Innovation and the IEEE has recognized him numerous times, culminating with its highest award, the Medal of Honor.

He has written or edited 19 books and over 500 scientific articles. Professor Baliga is a Fellow of the IEEE and Member of the National Academy of Engineering. After fifteen years, he left GE for a faculty position at North Carolina State University, where he led the development of a successful start-up culture based on some of his 120 U.S. Its efficiency has enabled enormous reductions of energy consumption, helping limit carbon dioxide emissions around the world. IGBTs are integrated widely in consumer, industrial, lighting, transportation, medical, renewable energy, and other technologies. in electrical engineering in 1974.īaliga joined General Electric Company where he invented, developed, and commercialized the insulated gate bipolar transistor (IGBT) and spearheaded commercialization of wideband semiconductor integrated circuits. Baliga continued his studies at Rensselaer Polytechnic Institute, receiving the Ph.D. His father's position as a director for India's largest electronics firm fed his interest in the technology and led to an electrical engineering degree from Indian Institute of Technology, Madras in 1969. Jayant Baliga was born in Madras, India, in 1948.

4.1 Family and Electronics in India, 1948-1963.
